Dark Current Suppression during High Speed Photogate Modulation for 3D ToF Imaging Pixel

نویسندگان

  • Tae-Yon Lee
  • YongJei Lee
  • Dong-Ki Min
  • Joonho Lee
  • Young-Gu Jin
  • Yoondong Park
  • Chilhee Chung
  • Ilia Ovsiannikov
  • Eric R. Fossum
چکیده

A pair of photogates is employed as a high frequency demodulation pixel for three dimensional time-of-flight image sensor. Using a 192×108 array of the pixels, demodulation contrast above 50% is achieved at 20MHz frequency and the test chip exhibits distance error less than 1% up to 7 m detection of the object. Modulation frequency dependent behavior of dark current is observed: dark current is reduced as the photogate modulation frequency increases. One possible interpretation is quenching of interface traps under the photogate by carriers from the bridging diffusion especially at reduced temperature.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A 192×108 pixel ToF-3D image sensor with single-tap concentric-gate demodulation pixels in 0.13 μm technology

A single-tap concentric photogate pixel of 28 μm pitch is developed for application to time-of-flight (ToF) three dimension (3D) image sensors. The 198×108 ToF pixel array exhibits demodulation contrast higher than 50% and distance error less than 1%, over 1 to 7 m range using 20MHz modulation of 850 nm light emitting diode (LED) illumination.

متن کامل

Active Pixel Sensors Fabricated in a Standard 0.18 um CMOS Technology

CMOS image sensors have benefited from technology scaling down to 0.35μm with only minor process modifications. Several studies have predicted that below 0.25μm, it will become difficult, if not impossible to implement CMOS image sensors with acceptable performance without more significant process modifications. To explore the imaging performance of CMOS image sensors fabricated in standard 0.1...

متن کامل

Active Pixel Sensors Fabricated in a Standard 0.18 urn CMOS Technology

CMOS image sensors have benefited from technology scaling down to O.351um with only minor process modifications. Several studies have predicted that below O.25m, it will become difficult, if not impossible to implement CMOS image sensors with acceptable performance without more significant process modifications. To explore the imaging performance of CMOS image sensors fabricated in standard O.1...

متن کامل

High Resolution 3D Intracranial Imaging at 3.0T

Introduction Vessel wall imaging of intracranial arteries is challenging due to their small sizes and their relatively deep locations inside the brain. 3D Time-of-flight (TOF) and contrast enhanced MRA (ceMRA) are commonly used [1] luminographic techniques. They lack specificity as luminal defects may be caused by various reasons. Dark blood, two dimensional turbo spin echo (2DTSE) has been use...

متن کامل

A high-resolution time-of-flight range image sensor with a 3-tap lateral electric field charge modulator

1. Intoroduction Recently, various time-of-flight (TOF) range imagers [1-4] have been developed, and are becoming popular in 3D acquisition cameras. This is because TOF range imagers have a high-speed capturing capability, and their millimetric range resolutions are sufficient for their applications such as gesture recognition. However, to apply the TOF range imagers to contactless 3D scanners,...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011